Longxing Shi, : rechercher sur Z-Library

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1

Novel failure mechanism and improvement for split-gate trench MOSFET with large current under unclamped inductive switch stress

Tian, Ye, Yang, Zhuo, Xu, Zhiyuan, Liu, Siyang, Sun, Weifeng, Shi, Longxing, Zhu, Yuanzheng, Ye, Peng, Zhou, Jincheng

Journal:

Superlattices and Microstructures

Année:

2018

Langue:

english

Fichier:

PDF, 2.65 MB

english, 2018

2

The optimization of deep trench isolation structure for high voltage devices on SOI substrate

Qinsong Qian, Weifeng Sun, Dianxiang Han, Siyang Liu, Zhan Su, Longxing Shi

Journal:

Solid-State Electronics

Année:

2011

Langue:

english

Fichier:

PDF, 909 KB

english, 2011

3

A Review on Hot-Carrier-Induced Degradation of Lateral DMOS Transistor

Liu, Siyang, Sun, Weifeng, Qian, Qinsong, Wei, Jiaxing, Fang, Jiong, Li, Ting, Zhang, Chi, Shi, Longxing

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2018

Langue:

english

Fichier:

PDF, 4.38 MB

english, 2018

4

Study of the power capability of LDMOS and the improved methods

Zhilin Sun, Weifeng Sun, Yangbo Yi, Longxing Shi

Journal:

Microelectronics Reliability

Année:

2006

Langue:

english

Fichier:

PDF, 229 KB

english, 2006

5

Devices’ optimization against hot-carrier degradation in high voltage pLEDMOS transistor

Hong Wu, Qinsong Qian, Siyang Liu, Weifeng Sun, Longxing Shi

Journal:

Microelectronics Reliability

Année:

2010

Langue:

english

Fichier:

PDF, 683 KB

english, 2010

6

A Robust 3-D Structure for Superjunction VDMOS Under Unclamped Inductive Switching Condition

Zhu, Jing, Zhang, Long, Shi, Longxing, Sun, Weifeng, Lu, Shengli

Journal:

IETE Journal of Research

Année:

2012

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2012

7

Hot-Carrier-Induced On-Resistance Degradation of n-Type Lateral DMOS Transistor With Shallow Trench Isolation for High-Side Application

Weifeng Sun,, Chunwei Zhang,, Siyang Liu,, Longxing Shi,, Wei Su,, Aijun Zhang,, Shaorong Wang,, Shulang Ma,

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2015

Langue:

english

Fichier:

PDF, 686 KB

english, 2015

8

Noise Immunity and its Temperature Characteristics Study of the Capacitive-loaded Level Shift Circuit for High Voltage Gate Drive IC

Zhu, Jing, Zhang, Yunwu, Sun, Weifeng, Lu, Yang Yang, Shi, Longxing, Gu, Yan, Zhang, Sen

Journal:

IEEE Transactions on Industrial Electronics

Année:

2017

Langue:

english

Fichier:

PDF, 2.57 MB

english, 2017

9

Turn-Off Transient of Superjunction SOI Lateral IGBTs: Mechanism and Optimization Strategy

Zhang, Long, Zhu, Jing, Ma, Jie, Cao, Shilin, Li, Ankang, Li, Shaohong, Ye, Ran, Sun, Weifeng, Zhao, Jianfeng, Shi, Longxing

Journal:

IEEE Transactions on Electron Devices

Année:

2019

Langue:

english

Fichier:

PDF, 2.97 MB

english, 2019

10

A review of safe operation area

Zhilin Sun, Weifeng Sun, Longxing Shi

Journal:

Microelectronics Journal

Année:

2006

Langue:

english

Fichier:

PDF, 344 KB

english, 2006

11

Modeling Kirk effect of RESURF LDMOS

Zhilin Sun, Weifeng Sun, Longxing Shi

Journal:

Solid-State Electronics

Année:

2005

Langue:

english

Fichier:

PDF, 138 KB

english, 2005

12

An Efficient Adaptive Importance Sampling Method for SRAM and Analog Yield Analysis

Shi, Xiao, Yan, Hao, Wang, Jinxin, Zhang, Jiajia, Shi, Longxing, He, Lei

Journal:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Année:

2020

Langue:

english

Fichier:

PDF, 10.42 MB

english, 2020

13

High-voltage power integrated circuit technology using bulk-silicon for plasma display panels data driver IC

Weifeng Sun, Jianhui Wu, Shengli Lu, Yangbo Yi, Longxing Shi

Journal:

Microelectronic Engineering

Année:

2004

Langue:

english

Fichier:

PDF, 410 KB

english, 2004

14

Improving the yield and reliability of the bulk-silicon HV-CMOS by adding a P-well

Weifeng Sun, Longxing Shi

Journal:

Microelectronics Reliability

Année:

2005

Langue:

english

Fichier:

PDF, 412 KB

english, 2005

15

The degradation mechanisms in high voltage pLEDMOS transistor with thick gate oxide

Hong Wu, Weifeng Sun, Yangbo Yi, Haisong Li, Longxing Shi

Journal:

Microelectronics Reliability

Année:

2008

Langue:

english

Fichier:

PDF, 234 KB

english, 2008

16

Investigation of the shift of hot spot in lateral diffused LDMOS under ESD conditions

Qinsong Qian, Weifeng Sun, Jing Zhu, Longxing Shi

Journal:

Microelectronics Reliability

Année:

2010

Langue:

english

Fichier:

PDF, 1.88 MB

english, 2010

17

[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - Small-signal transfer functions for a single-switch buck-boost converter in continuous conduction mode

Qing Wang,, Longxing Shi,, Changyuan Chang,

Année:

2008

Langue:

english

Fichier:

PDF, 1.55 MB

english, 2008

18

A novel surface potential-based short channel MOSFET model for circuit simulation

Kan Jia, Weifeng Sun, Longxing Shi

Journal:

Microelectronics Journal

Année:

2011

Langue:

english

Fichier:

PDF, 513 KB

english, 2011

19

Trench superjunction VDMOS with charge imbalance cells

Weifeng Sun, Jing Zhu, Qingsong Qian, Pengfei Cao, Siyang Liu, Zhan Su, Shengli Lu, Longxing Shi

Journal:

Solid-State Electronics

Année:

2011

Langue:

english

Fichier:

PDF, 524 KB

english, 2011

20

High-voltage power IC technology with nVDMOS, RESURF pLDMOS, and novel level-shift circuit for PDP scan-driver IC

Weifeng Sun, Longxing Shi, Zhilin Sun, Yangbo Yi, Haisong Li, Shengli Lu

Journal:

IEEE Transactions on Electron Devices

Année:

2006

Langue:

english

Fichier:

PDF, 286 KB

english, 2006

21

A CMOS Switched Load Harmonic Rejection Mixer for DTV Tuner Applications

Chen, Chao, Wu, Jianhui, Huang, Cheng, Shi, Longxing

Journal:

IEEE Transactions on Circuits and Systems I: Regular Papers

Année:

2013

Langue:

english

Fichier:

PDF, 2.82 MB

english, 2013

22

The Investigation of Electrothermal Characteristics of High-Voltage Lateral IGBT for ESD Protection

Qinsong Qian, Weifeng Sun, Shouming Wei, Siyang Liu, Longxing Shi

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2012

Langue:

english

Fichier:

PDF, 963 KB

english, 2012

23

A Novel Compact High-Voltage LDMOS Transistor Model for Circuit Simulation

Shi, Longxing, Jia, Kan, Sun, Weifeng

Journal:

IEEE Transactions on Electron Devices

Année:

2013

Langue:

english

Fichier:

PDF, 385 KB

english, 2013

24

[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Linear drain current degradations of FG-pLEDMOS transistor under different AC stress conditions

Qian, Qinsong, Sun, Weifeng, Liu, Siyang, Shi, Longxing, Su, Wei, Xu, Zhengxin, Ma, Shulang

Année:

2012

Langue:

english

Fichier:

PDF, 633 KB

english, 2012

25

[IEEE 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Tianjin, China (2011.11.17-2011.11.18)] 2011 IEEE International Conference of Electron Devices and Solid-State Circuits - A novel surface potential-based mobility degradation model of thin-oxide-MOSFET for circuit simulation

Jia, Kan, Sun, Weifeng, Shi, Longxing

Année:

2011

Langue:

english

Fichier:

PDF, 285 KB

english, 2011

26

[IEEE 2011 IEEE 9th International Conference on ASIC (ASICON 2011) - Xiamen, China (2011.10.25-2011.10.28)] 2011 9th IEEE International Conference on ASIC - A 65nm 10MHz single-inductor dual-output switching buck converter with time-multiplexing control

Miao Yang,, Weifeng Sun,, Shen Xu,, Shengli Lu,, Longxing Shi,

Année:

2011

Langue:

english

Fichier:

PDF, 975 KB

english, 2011

27

[IEEE 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Suzhou, Jiangsu, China (2009.07.6-2009.07.10)] 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Reliability problems investigation during the pLEDMOS fabrication

Qinsong Qian,, Hong Wu,, Siyang Liu,, Weifeng Sun,, Longxing Shi,

Année:

2009

Langue:

english

Fichier:

PDF, 4.10 MB

english, 2009

28

[IEEE 2006 IEEE International Symposium on Circuits and Systems - Island of Kos, Greece (21-24 May 2006)] 2006 IEEE International Symposium on Circuits and Systems - Energy-optimal dynamic voltage scaling for sporadic tasks

Bu Aiguo,, Shi Longxing,, Hu Chen,, Li Jie,, Wang Chao,

Année:

2006

Langue:

english

Fichier:

PDF, 4.80 MB

english, 2006

29

[IEEE 2011 IEEE 9th International Conference on ASIC (ASICON 2011) - Xiamen, China (2011.10.25-2011.10.28)] 2011 9th IEEE International Conference on ASIC - Low power design for SoC with power management unit

Daying Sun,, Shen Xu,, Weifeng Sun,, Shengli Lu,, Longxing Shi,

Année:

2011

Langue:

english

Fichier:

PDF, 586 KB

english, 2011

30

Research into charge pumping method technique for hot-carrier degradation measurement of LDMOS

Qinsong, Qian, Siyang, Liu, Weifeng, Sun, Longxing, Shi

Journal:

Journal of Semiconductors

Année:

2009

Langue:

english

Fichier:

PDF, 679 KB

english, 2009

31

A digital prediction algorithm for a single-phase boost PFC

Wang, Qing, Chen, Ning, Sun, Weifeng, Lu, Shengli, Shi, Longxing

Journal:

Journal of Semiconductors

Année:

2012

Langue:

english

Fichier:

PDF, 606 KB

english, 2012

32

An Integrated Bootstrap Diode Emulator for 600V High Voltage Gate Drive IC with P-Sub/P-Epi Technology

Zhu, Jing, Sun, Weifeng, Zhang, Yunwu, Lu, Shengli, Shi, Longxing, Zhang, Sen, Su, Wei

Journal:

IEEE Transactions on Power Electronics

Année:

2015

Langue:

english

Fichier:

PDF, 1.85 MB

english, 2015

33

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - A high current density SOI-LIGBT with Segmented Trenches in the Anode region for suppressing negative differential resistance regime

Zhang, Long, Zhu, Jing, Sun, Weifeng, Du, Yicheng, Yu, Hui, Huang, Keqin, Shi, Longxing

Année:

2015

Langue:

english

Fichier:

PDF, 488 KB

english, 2015

34

A novel area-efficiency multi-finger GGnMOS with high ESD robustness

Zhang, Chunwei, Liu, Siyang, Sun, Weifeng, Shi, Longxing

Journal:

Solid-State Electronics

Année:

2015

Langue:

english

Fichier:

PDF, 667 KB

english, 2015

35

A new high-side and low-side LDMOST with a selective buried layer in the substrate

Cheng, Jianbing, Zhang, Bo, Sun, Weifeng, Shi, Longxing, Li, Zhaoji

Journal:

Superlattices and Microstructures

Année:

2014

Langue:

english

Fichier:

PDF, 1.54 MB

english, 2014

36

A Novel Silicon-on-Insulator Lateral Insulated-Gate Bipolar Transistor With Dual Trenches for Three-Phase Single Chip Inverter ICs

Weifeng Sun,, Jing Zhu,, Long Zhang,, Hui Yu,, Yicheng Du,, Keqin Huang,, Shengli Lu,, Longxing Shi,, Yangbo Yi,

Journal:

IEEE Electron Device Letters

Année:

2015

Langue:

english

Fichier:

PDF, 1.06 MB

english, 2015

37

Electrical Characteristic Study of an SOI-LIGBT With Segmented Trenches in the Anode Region

Zhu, Jing, Zhang, Long, Sun, Weifeng, Chen, Meng, Zhou, Feng, Zhao, Minna, Shi, Longxing, Gu, Yan, Zhang, Sen

Journal:

IEEE Transactions on Electron Devices

Année:

2016

Langue:

english

Fichier:

PDF, 2.08 MB

english, 2016

38

Further Study of the U-Shaped Channel SOI-LIGBT With Enhanced Current Density for High-Voltage Monolithic ICs

Zhu, Jing, Zhang, Long, Sun, Weifeng, Du, Yicheng, Huang, Keqin, Chen, Meng, Shi, Longxing, Gu, Yan, Zhang, Sen

Journal:

IEEE Transactions on Electron Devices

Année:

2016

Langue:

english

Fichier:

PDF, 3.47 MB

english, 2016

39

A novel DC-12GHz variable gain amplifier in InGaP/GaAs HBT technology

Hu, Shanwen, Gao, Huai, Shi, Longxing, Li, G. P.

Journal:

IEICE Electronics Express

Année:

2013

Langue:

english

Fichier:

PDF, 3.29 MB

english, 2013

40

Current reused Colpitts VCO and frequency divider with quadrature outputs

Ji, Xincun, Huang, Fuqing, Wu, Jianhui, Shi, Longxing

Journal:

IEICE Electronics Express

Année:

2011

Langue:

english

Fichier:

PDF, 336 KB

english, 2011

41

Novel Snapback-Free Reverse-Conducting SOI-LIGBT With Dual Embedded Diodes

Zhang, Long, Zhu, Jing, Sun, Weifeng, Chen, Meng, Zhao, Minna, Huang, Xuequan, Chen, Jiajun, Qian, Yuxiang, Shi, Longxing

Journal:

IEEE Transactions on Electron Devices

Année:

2017

Langue:

english

Fichier:

PDF, 2.82 MB

english, 2017

42

Structure of human M-type phospholipase A2 receptor revealed by cryo-electron microscopy

Dong, Yue, Cao, Longxing, Tang, Hua, Shi, Xiangyi, He, Yongning

Journal:

Journal of Molecular Biology

Année:

2017

Langue:

english

Fichier:

PDF, 1.42 MB

english, 2017

43

Study on EMI Characteristics of the Superjunction DMOS in Flyback Converter System

Zhu, Jing, Li, Shaohong, Sun, Weifeng, Yang, Zhuo, Sun, Yi, Zhou, Jincheng, Chen, Jian, Shi, Longxing, Ye, Peng, Li, Zongqing

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2017

Langue:

english

Fichier:

PDF, 1.53 MB

english, 2017

44

[IEEE 2017 IEEE Asian Solid-State Circuits Conference (A-SSCC) - Seoul (2017.11.6-2017.11.8)] 2017 IEEE Asian Solid-State Circuits Conference (A-SSCC) - A 0.44V-1.1V 9-transistor transition-detector and half-path error detection technique for low power applications

Shang, Xinchao, Shan, Weiwei, Shi, Longxing, Wan, Xing, Yang, Jun

Année:

2017

Langue:

english

Fichier:

PDF, 506 KB

english, 2017

45

A Double Dwell High Sensitivity GPS Acquisition Scheme Using Binarized Convolution Neural Network

Wang, Zhen, Zhuang, Yuan, Yang, Jun, Zhang, Hengfeng, Dong, Wei, Wang, Min, Hua, Luchi, Liu, Bo, Shi, Longxing

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 4.19 MB

english, 2018

46

Machine Learning Assisted Side-Channel-Attack Countermeasure and Its Application on a 28-nm AES Circuit

Shan, Weiwei, Zhang, Shuai, Xu, Jiaming, Lu, Minyi, Shi, Longxing, Yang, Jun

Journal:

IEEE Journal of Solid-State Circuits

Année:

2019

Fichier:

PDF, 3.77 MB

2019

47

A 22nm, 10.8Î¼W/15.1Î¼W Dual Computing Modes High Power-Performance-Area Efficiency Domained Background Noise Aware Keyword-Spotting Processor

Liu, Bo, Cai, Hao, Wang, Zhen, Sun, Yuhao, Shen, Zeyu, Zhu, Wentao, Li, Yan, Gong, Yu, Ge, Wei, Yang, Jun, Shi, Longxing

Journal:

IEEE Transactions on Circuits and Systems I: Regular Papers

Année:

2020

Fichier:

PDF, 7.40 MB

2020

48

[IEEE 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE) - Grenoble, France (2020.3.9-2020.3.13)] 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE) - Modeling and Designing of a PVT Auto-tracking Timing-speculative SRAM

Shen, Shan, Shao, Tianxiang, Ling, Ming, Yang, Jun, Shi, Longxing

Année:

2020

Fichier:

PDF, 811 KB

2020

49

Design and implementation of a hybrid DPWM under 50 ps resolution based on generalâpurpose FPGA

Yu, Limin, Xu, Shen, Zhang, Huaxin, Shi, Longxing, Sun, Weifeng

Journal:

International Journal of Circuit Theory and Applications

Année:

2020

Fichier:

PDF, 4.27 MB

2020

50

Low cost bulk-silicon CDMOS technology and enhanced dv/dt high voltage driver circuit for PDP data driver IC

Haisong Li, Qinsong Qian, Hong Wu, Weifeng Sun, Longxing Shi

Journal:

Microelectronics Journal

Année:

2009

Langue:

english

Fichier:

PDF, 513 KB

english, 2009